发明名称 |
METHOD FOR PREVENTING GAP OF WAFER EDGE |
摘要 |
PURPOSE: A method for preventing a gap of a wafer edge is provided to prevent efficiently the generation of bridge and pollution by preventing a gap of a conductive layer on a chip region of a wafer edge overlapped with an EBR(Edge Bead Remove) region. CONSTITUTION: A photoresist layer(42) is applied on a wafer(40) formed with a conductive layer. The photoresist layer(42) is exposed without removing an EBR region. A photoresist pattern is formed to cover a chip region overlapped with the EBR region and define conductive layer patterns of each chip by developing the photoresist layer(42). Conductive patterns of each chip are formed by using the photoresist pattern as a mask. The photoresist patterns are removed.
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申请公布号 |
KR20010058601(A) |
申请公布日期 |
2001.07.06 |
申请号 |
KR19990065952 |
申请日期 |
1999.12.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
PARK, CHAN DONG;YANG, IN GWON |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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