| 摘要 |
PURPOSE: A method for forming an impurity junction of a semiconductor device is provided to achieve a sub-tenth micron CMOS and to improve the reliability of the semiconductor device by preventing the short channel effect. CONSTITUTION: A field oxide layer(2) is formed in a semiconductor substrate(1). The first and second conductive well areas(3,4) are formed at both sides of the field oxide layer(2). A gate oxide layer(5) and a gate electrode(6) are sequentially formed on the first and second conductive well areas(3,4). An LDD area(7) is formed by implanting the first conductive impurity into the first and second conductive well areas(3,4). An anti-diffusing layer(8) is formed on an exposed surface of the structure. A PSG layer(9) is formed on an exposed portion of the structure. A PSG layer spacer(9a) is formed by etching the PSG layer(9). A source/drain junction area(11) is formed by implanting the second impurity into the first conductive well area. A shallow source/drain junction area(12) is formed in the LDD area(7).
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