ESD PROTECTING CIRCUIT

摘要

PURPOSE: An ESD protecting circuit is provided to improve the endurance with respect to the ESD by shortening the turn-on time of a bipolar transistor. CONSTITUTION: An ESD protecting circuit comprises a semiconductor substrate(31). A bipolar transistor including an impurity area is formed on the semiconductor substrate(31). A plurality of conductive layers(39) are formed at upper portion of the semiconductor substrate(31). The conductive layers(39) have contact holes at a gate(37) and the impurity area of the bipolar transistor. A pad section(41) is formed on an upper portion of the conductive layers(39) in such a manner that a capacitance is generated between the pad section(41) and the conductive layers(39) which are connected to the gate(37) of the bipolar transistor. The pad section(41) makes contact with one of the conductive layers(39).