发明名称 HIGH-SPEED THERMAL PROCESSING SYSTEM OF SEMICONDUCTOR WAFER
摘要 PURPOSE: A high-speed thermal processing system of a semiconductor wafer is provided to improve thermal uniformity of a wafer by performing automatically an annealing process of a wafer. CONSTITUTION: A gas exhaust hole(15) discharges a gas of an exhaust duct portion(12) to the outside. A wafer transfer hole(16) is connected with a heater loading portion(13). An exhaust gas absorption portion(17) is connected with the exhaust duct portion(12). A heater chamber body(14) has a preheat portion(14a) preheats a wafer(50). A heater(20) is installed on an upper face of a wafer reception portion(19). A gas injection hole(21) injects the gas into the wafer reception portion(19). A multitude of thermal sensor portion(22) is installed on an inner circumference of the wafer reception portion(19). A ceramic board(18) is mounted within a heater loading portion(13) of the heater chamber body(14). A support plate(23) supports a heater chamber(11). A plurality of guide bar(25) supports the heater chamber(11). A wafer lifting unit(31) transfers the wafer(50). A lifting frame(29) has a screw assembly hole(30). A screw(28) moves the wafer lifting unit(31). A driving motor(27) is installed on the support plate(23). A control portion(38) controls operations of the heater(20) and the driving motor(27).
申请公布号 KR20010058712(A) 申请公布日期 2001.07.06
申请号 KR19990066070 申请日期 1999.12.30
申请人 KANG, WOONG SHIK;LEE, GYOUNG HWAN 发明人 KANG, WOONG SHIK;KIM, PIL GYU;LEE, GYOUNG HWAN
分类号 H01L21/324;(IPC1-7):H01L21/324 主分类号 H01L21/324
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