| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage capable of shortening time from the start of one cycle and sense in a pre-charge control signal to both of initial reading or writing of it. SOLUTION: Input and output lines are pre-charged to voltage Va at a moment of time when a signal RASB is started. After that, when the pre-charge control signal PIO is started, potentials of the input and output lines are drawn by a potential of a bit line connected with a memory cell. Even when operation this time is reading of data from a selected memory cell, the voltage Va at a pre-charge level is higher than a balance level, so difference among the potentials of one bit line and the input and output lines become large and the potentials of the input and output lines largely drop. Next, when the pre-charge signal is started, the input and output lines are pre-charged to a voltage level Vb (balance level). Thus, even when operation before the pre-charge is writing, the potentials of the input and output line promptly reach the voltage Vb.
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