| 摘要 |
PURPOSE: A method for forming a damascene conductive line of a semiconductor device is provided to stabilize a characteristic of a semiconductor device by preventing a loss of a nitride layer for protecting a metal layer and a loss of an interlayer dielectric. CONSTITUTION: An interlayer dielectric(21) having an opening portion is formed on an upper portion of a lower layer of a silicon substrate(20) in order to expose the lower layer. A metal layer(24) is buried into a part of the opening portion. A silicon nitride layer is deposited on an upper portion of the whole structure. The silicon nitride layer is changed to An Si-rich silicon nitride layer(25a). A chemical mechanical polishing process for the Si-rich silicon nitride layer(25a) is performed to expose the interlayer dielectric(21) by using a slurry.
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