| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to leave a photoresist pattern on a de-focus die region by using a die block mask and to reject the difference between the de-focus die region and normal die region to increase net die yield. CONSTITUTION: The semiconductor device forming method includes following steps. At first, a photoresist pattern applied on the de-focus die region(400) located on the edge of a wafer is formed by using an exposing and developing processes using a die block mask before a removing process of a sacrifice dielectric layer performed after a cylindrical storage forming process. Then, the sacrifice dielectric layer is removed by using the photoresist pattern as a mask to remove the photoresist pattern in order to provide the storage electrode(35). The die block mask is a reticle which blocks the de-focus die region at the edge of the wafer and exposes the normal die region.
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