| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to minimize a damage of a semiconductor device and reduce a contact resistance by using a triple damascene method. CONSTITUTION: A word line(2) and a bit line(3) are formed on a semiconductor substrate. An SAC barrier(5) is formed thereon. The first interlayer dielectric is formed thereon. A damascene barrier is formed on a peripheral circuit portion of the first interlayer dielectric. A contact region of a peripheral circuit portion of the damascene barrier is etched. The second interlayer dielectric is formed on the whole structure. A capacitor is formed on a cell region of the semiconductor substrate. The third interlayer dielectric(14) is formed on the whole structure. A metal line contact hole is formed and a metal line contact plug(15) are formed by performing an etching process.
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