| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is to increase the reliability of a device operation and the process yields by preventing an isolation oxide layer from being damaged due to the vertical misalignment. CONSTITUTION: An isolation oxide layer(11) is formed in a semiconductor substrate(10) to define an active region having T-shape. A MOSFET is completed by forming a gate electrode, an insulating layer spacer, and source/drain regions. An insulating dielectric(20) is formed on the entire surface of the semiconductor substrate. A photoresist pattern is formed on the interlayer dielectric. The photoresist pattern has a vertical misaligned part. Also, the photoresist pattern has a slope surface by annealing it at 120 to 150 deg.C for 70 to 120 seconds. A contact hole(24) having a slope surface is formed by removing the exposed interlayer dielectric, using the photoresist pattern as a mask. Next, after removing the photoresist pattern, a contact plug(28) is formed to bury in the contact hole.
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