| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of manufacturing a DMOS transistor that decreases work time while maintaining its reliability and reduces its manufacturing cost. SOLUTION: A silicon substrate 11 forms an N- type drift region. A pattern of a masking layer for local oxidation of silicon 12 is formed on this substrate 11, and an element-isolation insulating film 13 is formed by selectively oxidizing the pattern. After that, a lithography process is added again to this masking layer 12, and the masking layer 12 is etched in accordance with the pattern of a resist 14. This etched masking layer is used as a P+ type body diffused layer and an ion implantation mask for N- type and source offset layer. The subsequent gate-forming process is implemented by the same process as a MOS transistor forming process other than DMOS.
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