| 摘要 |
PROBLEM TO BE SOLVED: To improve high-frequency characteristics of a lateral bipolar transistor. SOLUTION: In a manufacturing method of a bipolar transistor, in which an emitter region, a base region, a collector region are arranged in the crosswise direction on a semiconductor layer formed on an insulating film, an extracting electrode for applying the potential that in the past could not be applied to the base region is formed self-consistently, and the bipolar transistor with good controllability can be formed without increasing parasitic resistance by parasitic capacity.
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