| 摘要 |
PURPOSE: A method for forming a damascene gate of a semiconductor device is provided to prevent a void of an inside of a damascene gate by burying a conductive layer for gate electrode into a damascene gate groove. CONSTITUTION: A lower structure including a gate groove of a small line width and a gate groove of a wide line width is formed on a semiconductor substrate(20). The first metal layer(27) is deposited on the whole structure by using an atomic layer deposition method. The second metal layer(28) is deposited on the first metal layer(27) by using a chemical vapor deposition method. The gate groove of the large line width is buried fully by depositing the second metal layer(28). The first and the second metal layers(27,28) remain within the gate groove of the small line width and the gate groove of the wide line width by recessing the second and the first metal layers(28,27). |
