| 摘要 |
The high voltage switch has first circuit branch with high voltage field effect transistor and a resistance. There is a second parallel branch with two field effect transistors connected in series. The lower of these is a high voltage type, and the switch output is taken from the connection between these two transistors. The higher voltage switch comprises a first branch with a resistor (R) and a first MOS transistor of n-type (HT1) connected in series, and a second branch with two MOS transistors of n-type (HT2,HT3) connected in series, where both branches are connected between the higher voltage node (N1) and the ground. The connection point (B) between the second and third transistors gives the output signal (Out), and the second transistor (HT2) is controlled by the gate connected to the connection point (A) between the resistor (R), e.g. 20 kOhm, and the first transistor (HT1). The transistors are higher voltage MOS transistors of drift type with the drain formed by a structure with a well region and field oxide, or floating-gate type which is used as the control gate and comprises an oxide tunnel and gradual junction. |
