| 摘要 |
PURPOSE: A method for flattening a semiconductor device is provided to flatten a low dielectric polymer layer by performing a CMP(Chemical Mechanical Polishing) process using a slurry. CONSTITUTION: A low dielectric polymer layer(15) is formed on an upper portion of a wafer(11) having a metal pattern(13). A stepped portion is formed on the low dielectric polymer layer(15) according to a size or a density of the metal pattern(13). The low dielectric polymer layer(15) is flattened by performing a CMP process using a silica slurry. A polishing process for removing a scratch phenomenon is performed by using deionized water.
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