METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE WITH SELF-ALIGNED CONTACT

摘要

PURPOSE: A method for manufacturing a semiconductor memory device with a self-aligned contact is provided to prevent a damage of a conductive layer such as a bit line or a gate line generated by an SAC(Self-Aligned Contact) etching process. CONSTITUTION: A conductive layer pattern is formed on an upper portion of a semiconductor substrate(12). An insulating layer(20) is formed to cover the conductive layer pattern. In the process for forming the insulating layer, a void(22) is form uniformly between the conductive layer patterns. A contact hole(24) for exposing a semiconductor substrate(12) is formed by etching the insulating layer(20). An upper conductive layer is formed to be contacted the semiconductor substrate(12) through the contact hole.