METHOD FOR MANUFACTURING MOS TRANSISTOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a MOS transistor of a semiconductor device is provided to form widely a contact electrode for bit line and storage node by forming a source/drain junction on a substrate under an edge of the gate electrode. CONSTITUTION: A field oxide layer(12) is formed on a semiconductor substrate(10). A gate oxide layer(14) is formed on the semiconductor substrate(10). A conductive material is deposited on the gate oxide layer(14). A gate electrode is formed by patterning the gate oxide layer(14). A capping layer(20) is formed on the gate electrode(14). An LDD region(22) is formed on the substrate(10) under an edge of the gate electrode. A spacer(24) is formed at a side of the gate electrode. A high density doped polysilicon layer(26) is formed on the structure. A source/drain junction(28) is formed by diffusing the high density doped polysilicon layer(26). An interlayer dielectric(30) is formed on the substrate(10). A contact electrode(32) is formed by forming a contact hole on the interlayer dielectric(30) and burying the conductive material therein.