METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH SELF-ALINED CONTACT

摘要

PURPOSE: A method for manufacturing a semiconductor device with a self-aligned contact is provided to insulate safely a word line by forming a thick spacer edge around a bit line. CONSTITUTION: The first interlayer dielectric(102) is formed on a semiconductor substrate(100). A conductive line formation portion is opened by patterning the first interlayer dielectric(102). A spacer(104) is formed at a sidewall of the first interlayer dielectric(102). A conductive pattern(106) is formed on the opened substrate structure. A capping layer(108) is formed on the conductive pattern(106) by burying an insulating material into an opening portion of the first interlayer dielectric(102). The second interlayer dielectric(110) is formed on the first interlayer dielectric(102). A contact hole is formed within the second and the first interlayer dielectrics(110,102) by using a self-alined contact method. A contact electrode(114) is formed by burying the conductive material into the interlayer dielectrics(110,102).