METHOD FOR MANUFACTURING CONTACT ELECTRODE USING SAC ETCHING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact electrode using an SAC(Self-Aligned Contact) etching method of a semiconductor device is provided to minimize an etching damage of a spacer by forming a thick interlayer dielectric having an oxide layer and a nitride layer. CONSTITUTION: A capping layer(104) is formed on a semiconductor substrate(100) by using a conductive pattern(102) and a nitride. A spacer(106) is formed at a sidewall of the conductive pattern(102) by using the nitride. An interlayer dielectric is formed by laminating an oxide layer(108) and a nitride layer(110) thereon. A contact hole(114) is formed to expose a junction portion between the conductive patterns(102) by performing an SAC etching process for the interlayer dielectric. A conductive material is buried into the interlayer dielectric. A contact electrode is formed by performing a chemical mechanical polishing process.