| 发明名称 |
SEMICONDUCTOR MEMORY |
| 摘要 |
PROBLEM TO BE SOLVED: To specify a memory cell position without lowering level of integration. SOLUTION: A mark 20 for specifying a memory cell position is formed on the memory cell arranged near an intersection point of a word line 9 and a bit line 11 arrayed into a matrix shape. |
| 申请公布号 |
JP2001185695(A) |
申请公布日期 |
2001.07.06 |
| 申请号 |
JP19990365956 |
申请日期 |
1999.12.24 |
| 申请人 |
SANYO ELECTRIC CO LTD |
发明人 |
TAGUCHI HIROYUKI;KANAI MASARU;GOTO YUJI;WATANABE YUICHI |
| 分类号 |
H01L21/3205;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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