METHODS OF TREATING SURFACE OF SILICON WAFER, MANUFACTURING ODORLESS SILICON WAFER, MANUFACTURING OXIDE FILM ON SILICON WAFER AND MANUFACTURING SILICON OXIDE WAFER, DEVICE FOR FORMING OXYGEN ACTIVE SPECIES ATMOSPHERE AND PLANARIZATION SYSTEM

摘要

PURPOSE: To provide methods of treating a surface of a silicon wafer, manufacturing a silicon wafer, forming an oxide film on a silicon wafer, manufacturing a silicon oxide wafer, a device for forming an oxygen active species atmosphere and a planarization system with which surface contamination can be removed from a silicon wafer whose surface is contaminated after local etching within a short time, and further contamination of a planarized silicon wafer can be prevented. CONSTITUTION: A sulfur hexafluoride gas supplied into a discharge tube 30 by a local etching gas supplier 4 is discharged to generate a fluorine active species G. This fluorine active species G is sprayed on a surface of a silicon wafer W via a nozzle section 30a to perform local etching. Then, an oxygen gas supplied into the discharge tube 30 by an oxygen gas supplier 5 is discharged to generate oxygen active species G1. By filling this oxygen active species G1 in a chamber 1, contamination of the locally etched silicon wafer W is removed or an oxide film is formed over the whole surface of the silicon wafer W.