ESD PROTECTING CIRCUIT

摘要

PURPOSE: An ESD protecting circuit is provided to improve the yield rate of a semiconductor device and to enhance the function of the ESD by performing an ESD protection function with respect to two NPN bipolar transistor. CONSTITUTION: An ESD protecting circuit comprises a pad section(31) and a main chip(32). The first NPN bipolar transistor(33) is provided between the pad section(31) and the main chip(32). The first NPN bipolar transistor(33) is connected to the first voltage terminal and an output terminal of the pad section so as to allow the ESD charge to flow to the exterior through the first voltage terminal. The second NPN bipolar transistor(34) is provided between the pad section(31) and the main chip(32). The second NPN bipolar transistor(34) is connected to the second voltage terminal and the output terminal of the pad section(31) so as to allow the ESD charge to flow to the exterior through the second voltage terminal. The first NMOS transistor(35) is connected to the first and second voltage terminals. The second NMOS transistor(36) is connected to a gate of the first NMOS transistor(35) so as to allow the first NMOS transistor(35) to be maintained in a floating state.