| 摘要 |
PURPOSE: A method for manufacturing a PMOS(p-channel metal oxide silicon) transistor is to provide a high integrated semiconductor device with a shallow junction depth and a low surface resistance. CONSTITUTION: A gate insulating film(14) is formed on a substrate(10) with an active region and an isolation region. A conductive material is deposited on the gate insulating film, and then is patterned to form a gate electrode(16). The substrate is implanted with pure B using the gate electrode as a mask, thereby forming a source/drain conjunction(24'). At that time, the energy of ion implantation is 1 to 2 KeV, and an amount of irradiation is 1E15 to 5E15 ions per centimeters¬2. The substrate is loaded in a chamber of rapid annealing equipment, and is annealed to activate an impurity of the source/drain junction. The chamber is maintained at a N2 atmosphere, and is supplied with an oxygen gas.
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