SEMICONDUCTOR MEMORY DEVICE WITH DUAL LAYER OF OXIDE LAYER AND TITANIUM LAYER FOR PREVENTING HYDROGEN DIFFUSION AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor memory device with a dual layer of an oxide layer and a titanium layer for preventing hydrogen diffusion and a method for manufacturing the same are provided to prevent diffusion of hydrogen to an inside of a capacitor by forming a dual layer of an oxide layer and a Ti layer. CONSTITUTION: A transistor is formed on a semiconductor substrate(10). The first interlayer dielectric(15) is formed on the whole structure. A capacitor(17,18,19) is formed on the first interlayer dielectric(15). The second interlayer dielectric(20) is formed on the whole structure. The first contact hole(C1) is formed by etching selectively the second interlayer dielectric(20). The second contact hole is formed by etching selectively the second and the first interlayer dielectrics(20,15). A metal line is formed by depositing and patterning a Ti layer. An insulating layer(23) and a Ti layer(24) are formed on the whole structure. A pattern for covering the capacitor(17,18,19) is formed by etching selectively the Ti layer(24) and the insulating layer(23). A passivation layer(25) is formed on the whole structure.