| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-density high-speed dynamic random access memory(DRAM) by satisfying the cut-off characteristics of transistors and high-level write compensation in the memory cell area of the DRAM and, at the same time, improving transistor driving forces in the peripheral circuit area of the DRAM. SOLUTION: In the DRAM 1, the gate insulating film (not shown in the figure) of each transistor in a memory cell array block 11 and an I/O circuit block (I/O circuit area) 13 constituting the memory cell area of the DRAM 1 is formed thicker in thickness than the gate insulating film of each transistor in the peripheral circuit block (peripheral circuit area) 12. |
