METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor is to improve the characteristic and reliability of the semiconductor device by an exposing and developing process using two storage electrode masks. CONSTITUTION: The first interlayer dielectric(3) is formed on the entire structure. The first contact plug(4) is formed to be connected to the active region through the first interlayer dielectric. A bit line is formed to connect to the bit line contact plug. The second interlayer dielectric(7) is formed on the entire structure. The bit line has a sidewall and spacer nitride layer(5). A sacrificial oxide layer(9) is formed on the entire structure. A photoresist pattern is formed on the sacrificial oxide layer. A sacrificial oxide layer pattern is formed by etching the sacrificial oxide layer, using the photoresist pattern as a mask. Then, the photoresist pattern is removed. A storage electrode conductive layer(11) is formed on the entire structure including the sacrificial oxide layer pattern.