| 摘要 |
PURPOSE: A method for forming a metal wiring is to prevent an anti-reflective coating composed of a titanium nitride film from being detached from the first metallic layer composed of aluminum alloy by interposing a titanium film between the anti-reflective coating and the first metallic layer and annealing it. CONSTITUTION: A lower insulating layer is formed on a substrate, and is etched using a metal wiring contact mask to form a metal wiring contact hole. A diffusion stop film is formed on the entire surface of the substrate, and then a tungsten plug is formed to bury the contact hole. The first metal wiring is formed through the tungsten plug. At that time, the metal wiring is composed of the first titanium film, the first titanium nitride film(13), an aluminum alloy film(15), the second titanium film and the second titanium nitride film(19). The titanium film and the titanium nitride film are formed in different chamber.
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