| 摘要 |
PROBLEM TO BE SOLVED: To realize high integration of a semiconductor device by forming a groove buried wiring on a gate electrode of an unused field effect transistor without increasing the number of processes. SOLUTION: In an etching process for forming a contact hole in a layer insulation film, a wiring groove is formed along a longitudinal direction of a gate electrode in a layer insulation film covering over a gate electrode by using a protection film of a gate electrode as an etching stopper. In a process for burying a metallic material in a contact hole, a metallic material is buried in a wiring groove simultaneously, and thereby, a groove buried wiring can be formed on a gate electrode of an unused field effect transistor without increasing the number of processes. By using it, a capacitor which is incorporated in a semiconductor device can be formed on a gate electrode of an unused field effect transistor simultaneously with a multilayer wiring process. |
