发明名称 SEMICONDUCTOR PHOTO DETECTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To solve the problems that, because of a wide light receiving sensitivity and the light detection in a wide range in general, it was difficult to respond to light wavelength-division multiplex optical communication, and that the contact capacitance between the electrode and a semiconductor was large to result in a poor high speed responsibility. SOLUTION: The semiconductor light receiving element comprises a buffer layer, a light absorptive layer and a window layer sequentially laminated on a substrate, a first electrode connected to the window layer, and a second electrode connected to the substrate. The window layer is formed with a plurality of layer having optical band gaps gradually increasing away from the light absorptive layer.
申请公布号 JP2001185750(A) 申请公布日期 2001.07.06
申请号 JP19990365523 申请日期 1999.12.22
申请人 KYOCERA CORP 发明人 KITADA KATSUNOBU
分类号 H01L31/10;(IPC1-7):H01L31/10 主分类号 H01L31/10
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