| 摘要 |
PURPOSE: A method and apparatus is provided to exclude causes reducing the reliability of a semiconductor device such as a MOSFET device. CONSTITUTION: A rate equation indicates quantitatively the electric movement including the migration and the current of electrons between boundaries generated by a difference when a source and a channel are doped. The quantitative value of the electric movement is not precise when a doping level is not known. The MOSFET devices which indicate a more desirable electric movement can be designed. By using the rate equation, the movement of the MOSFET element can be simulated in a computer simulation program.
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