| 摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to improve the integration degree of a semiconductor device by forming a noble metal lower electrode having a vertical pattern. CONSTITUTION: An insulating layer(12) having a contact hole is formed on a semiconductor substrate(11). A conductive layer is formed in the contact hole. A lower electrode isolating layer is formed on the insulating layer including the conductive layer. Then, the lower electrode isolating layer is selectively removed such that a lower electrode area is only removed. A noble metal layer and a hard mask layer are formed on the entire surface of the structure. Then, the hard mask layer is etched. A lower electrode is formed by etching the noble metal layer. Then, the lower electrode isolating layer and the hard mask layer are removed. A high dielectric layer and an upper electrode are sequentially formed on the lower electrode.
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