| 摘要 |
PROBLEM TO BE SOLVED: To improve the sensitivity or the dynamic range of a CMOS image sensor. SOLUTION: The CMOS image sensor has a geometrical pixel layout configured of a photo detection element 22 consisting of two photodiodes Pd1, Pd2 and two turn-on transistors To, Te and of a conversion means 23 to allow a column line 24 to read an analog signal of a node Nd and a matrix-like two-dimensional layout is adopted for the elements. Turning on the turn-on transistor To connects the photodiodes Pd1, Pd2 on both sides of To in parallel in an odd numbered field and turning on the turn-on transistor Te connects the photodiodes Pd1, Pd2 on both sides of Te in parallel in an even numbered field. Thus, the two photodiodes are driven at the same time to enhance the sensitivity of a sensor while conducting interlace scanning.
|
