| 摘要 |
PURPOSE: A method for manufacturing a Ta2O5 capacitor in a semiconductor device is to convert a diffusion barrier layer into a dielectric layer having a high dielectric for a capacitor, thereby securing a high capacitance. CONSTITUTION: A semiconductor substrate(100) on which an interlayer dielectric(110) is formed is prepared. The interlayer dielectric is selectively etched to form a contact hole. A doped polycrystalline silicon is deposited on the resultant substrate and is patterned to form a cylindrical lower electrode(120) for a capacitor. A silicon nitride layer(122) is formed on the cylindrical lower electrode. A TaN layer(124) is formed on the silicon nitride layer. The TaN layer and the underlying silicon nitride layer function as a diffusion barrier layer. A Ta2O5 layer(126) is formed on the TaN layer by a metal oxidation chemical vapor deposition(MOCVD) method. A TiN layer(128) and a doped polycrystalline silicon layer are formed on the Ta2O5 layer to form an upper electrode(T).
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