METHOD FOR MANUFACTURING STORAGE NODE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a storage node electrode is to prevent a bridge a phenomenon from being happened between storage node electrodes due to a broken state of a hemispherical silicon grain. CONSTITUTION: A high concentration doped amorphous silicon film(40) and a low concentration doped amorphous silicon film(42) are formed on lower structures having a contact hole of an interlayer dielectric(22), and are patterned to form a storage node electrode pattern on an upper structure. Until a sacrificial oxide film is exposed, the high and concentration doped amorphous silicon films are annealed, and then the sacrificial oxide film is removed. The high concentration doped amorphous silicon film composed of an external portion(d) of a storage node electrode pattern(44) has a recessed surface having a small grain size or a flat surface having no grain. The low concentration doped amorphous silicon film composed of an internal portion(c) of the storage node electrode pattern has an asymmetric recessed surface.