METHOD FOR FORMING BIT LINE CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a bit line contact of a semiconductor device is provided to improve an operating characteristic of a semiconductor device by reducing a junction loss. CONSTITUTION: A word line is formed on a semiconductor substrate. The first oxide layer(2) is formed thereon. The first oxide layer(2) of a cell region is etched by performing an etching process. A landing plug poly is deposited on the whole structure. The second oxide layer(4) is formed on the whole structure. The first bit line contact mask is formed on the second oxide layer(4). The second oxide layer(4) is etched by using the first bit line contact mask. The second oxide layer(4) is etched by using the second bit line contact mask. A bit line(6) is deposited and etched on the whole structure.