METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to bury a W without generating a void by using an ALD(Atomic Layer Deposition) process. CONSTITUTION: A contact and a via hole are formed on an upper portion of a semiconductor substrate formed with a lower metal layer. An interlayer dielectric is formed on the whole structure. A contact or a via hole is formed by etching a part of the interlayer dielectric. A W ALD layer is formed on the whole structure by introducing a WF6 gas/purge gas/H2 gas or a SiO4 gas/purge gas. The remaining W except for the W of the inside of the hole is etched back.