| 摘要 |
PURPOSE: A method for forming a test pattern is to accurately identify an insulating condition between a bit line contact and a storage node contact while maintaining a shape of a T-shaped contact. CONSTITUTION: A gate oxide film is formed on a substrate by growing a thin oxide film thereon. A conductive layer for a gate and a mask layer are deposited on the gate insulating film, and the mask layer, the conductive layer, and the gate insulating film are patterned to form a word line(210). The entire surface of the substrate is implanted with an impurity ion to form a source/drain of a cell region and an impurity region of a test pattern region. By implanting the impurity on the entire surface of the test pattern region, the impurity region is formed on the test pattern region, with the first impurity region and the second impurity region divided and insulated by the word line.
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