METHOD FOR MANUFACTURING THIN FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a thin film is to eliminate a physical interface of each metallic film by executing molecular beam epitaxy, thereby providing the metallic film with gradual composition change. CONSTITUTION: The first thin film(34) is formed on a substrate by using a molecular beam of the first metal. The second thin film(34) is formed on the first thin film by mixing the molecular beam of the first metal and a molecular beam of the second metal. The third thin film(36) is formed on the second thin film by mixing the molecular beam of the second metal and a molecular beam of the third metal. The fourth thin film(38) is formed on the third thin film by using only the molecular beam of the third metal. The second thin film is formed by gradually increasing a flux ratio of the molecular beam of the second metal to the molecular beam of the first metal. The third thin film is formed by gradually increasing a flux ratio of the molecular beam of the third metal to the molecular beam of the second metal.