THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A thin film transistor is provided to increase capacitance, by reducing the thickness of a gate insulation layer used as a dielectric layer of a portion corresponding to a lower electrode formed in a capacitor region. CONSTITUTION: A transparent insulation substrate(31) includes a transistor region(T2) and a capacitor region(C2). A gate electrode(33) and a capacitor lower electrode(35) are formed on the transistor region and the capacitor region of the insulation substrate. A gate insulation layer(37) covers the gate electrode and the lower electrode formed on the insulation layer, wherein the gate insulation layer is thick in a portion corresponding to the gate electrode and is thin in a portion including the capacitor region. An active layer(39) is formed in a portion corresponding to the gate electrode on the gate insulation layer. An ohmic contact layer(41) is formed at both sides on the active layer. A source/drain electrode(43,45) is formed on the gate insulation layer, in contact with the ohmic contact layer. An upper electrode(47) is formed in a portion corresponding to the lower electrode formed in the capacitor region on the gate insulation layer.