| 摘要 |
PROBLEM TO BE SOLVED: To offer the structure of a semiconductor device and the manufacturing method of it, which realize a rough surface of an electrode without reducing a capacity of a capacitor and also without complicating the manufacturing process, regarding the semiconductor device which comprises a capacitor an electrode of which has a rough surface and manufacturing method of it. SOLUTION: This manufacturing method comprises a process for forming a silicon film on an insulating film, a process for forming a rough-surface polysilicon film having a rough surface, and a process for forming larger unevenness of the surface than that of the rough-surface polysilicon film by etching the rough-surface polysilicon film in a recess region of the rough-surface polysilicon film and the silicon film selectively. |
