| 摘要 |
PURPOSE: A charge coupled device and an imaging system using the same are provided to not easily influence by mask misalignments and skew ion implantation angles during the semiconductor manufacturing process. CONSTITUTION: Photodiodes(photoelectric conversion portions)(1) are formed in photoelectric conversion blocks(11,12, ... ,13) in the form of rows and columns. Between the columns of photodiodes, vertical charge transfer paths(VCCD)(2) extend along the columns. Vertical/horizontal conversion portions(V-H conversion portions)(14,15, ...,16) are formed between the photoelectric conversion blocks(11,12, ...,13) and the horizontal charge transfer paths(HCCD)(17,18, ... ,19). The horizontal charge transfer paths are connected to read-out amplifiers(31a,31b, ...,31c). Thus, a solid-state imaging device is achieved that is not so easily influenced by mask misalignments or skewed ion implantation angles, and in which signal read-out at high speeds is possible.
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