| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the operating characteristic and yield rate of the semiconductor device by preventing a contact resistance and ensuring a process margin. CONSTITUTION: A stack structure consisting of a pad oxide layer and a nitride layer is formed on an upper portion of a semiconductor substrate(20). A photosensitive layer pattern is formed on an upper portion of the nitride layer. Then, the stack structure and the semiconductor substrate are etched thereby forming a nitride layer pattern, a pad oxide layer pattern, and a trench. After that, the photosensitive layer pattern is removed. After forming a bury insulating layer on the upper portion of the structure, the bury insulating layer is removed by performing a CMP process. A field oxide layer(23) is formed by removing the bury insulating layer by a predetermined thickness. An etch stop layer is formed on the entire surface of the structure. After forming an etch stop layer pattern(24b), the pad oxide layer pattern is removed.
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