| 摘要 |
PURPOSE: A method for forming a tungsten silicide gate electrode is to provide a Si-poor tungsten silicide layer and a Si-rich tungsten silicide layer thereon, thereby improving characteristics of a gate electrode and yields of a semiconductor device. CONSTITUTION: A gate oxide layer is formed on a semiconductor substrate(10). On the resultant structure is deposited a polysilicon layer(30). A Si-poor tungsten silicide layer and a Si-rich tungsten silicide layer are successively deposited on the resultant structure using SiH4 and WF6 gases. A capping layer(60) is formed on the tungsten silicide layer. A mask oxide layer is formed on the capping layer and then etched to form a gate electrode. An oxide layer spacer is formed on a region ranging from the capping layer to the gate oxide layer by an oxidation process. An annealing is implemented before or after the formation of the mask oxide layer.
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