METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is to remove tungsten deposited on a hole region upon carrying out an etching-back process, thereby perventing disappearance of a marking due to the scattered reflection. CONSTITUTION: A hole is formed on a position spaced apart at 4 millimeters in a right direction and 2.5 millimeters in an upper direction from a center of a flat zone of a bare wafer(1) using a laser beam. An isolation oxide layer is deposited, and is carried out by a depth of 2.3 millimeters through a wafer edge exposure(WEE) procedure. A word line is formed, and is carried out by a depth of 2.5 millimeters through a WEE procedure. The first interpoly oxide(11) is deposited at a thickness of 1 micrometer, and is carried out through a planarization process to leave a step of 0.3 micrometer on the word line.