| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to form a silicon nitride layer having a prominent barrier characteristic by nitrifying a silicon oxide of a sidewall. CONSTITUTION: A metal capping layer(3), the first interlayer dielectric(5), a silicon nitride layer(7), and the second interlayer dielectric(9) are formed on an upper portion of a lower metal layer(1). The stacked layers are etched by using a via contact mask. A via hole(11) and a metal line trench(13) are formed by etching the stacked layers. A plasma nitrification process is performed by generating plasma under a high pressure. An insulator barrier layer(17) is formed by nitrifying the via hole and an inside of the metal line trench sidewall. A metal barrier layer(19) is formed on the whole structure.
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