发明名称 LASER ANNEAL METHOD AND DEVICE
摘要 PROBLEM TO BE SOLVED: To uniformly conduct a recrystallization of a silicon thin film, etc. SOLUTION: A laser annealing device comprises a plurality of laser oscillators 1, 2, 3; and a controller 4 for controlling operations of the plurality of laser oscillators, and the controller 4 selects any one of the plurality of laser oscillators and operates sequentially them to irradiate laser beams on a predetermined region.
申请公布号 JP2001185504(A) 申请公布日期 2001.07.06
申请号 JP19990364988 申请日期 1999.12.22
申请人 SANYO ELECTRIC CO LTD;TOTTORI SANYO ELECTRIC CO LTD 发明人 OKITA YUJI;TAKADA TSUTOMU
分类号 H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/268 主分类号 H01L21/20
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