| 摘要 |
PURPOSE: A method for metallization is to improve the reliability of a semiconductor device by preventing the short-circuit and the disconnection in forming a metal interconnection. CONSTITUTION: An aluminum layer(21) is formed on a semiconductor substrate(20). A Ti layer is formed on the aluminum layer. A TiAl3 layer(22) is formed at an interface between the Ti layer and the aluminum layer. An Si layer is formed on the Ti layer by using a PVD(Physical Vapor Deposition) method. A TiSi2 layer(25) is formed through an annealing process at the temperature of 400 to 600 deg.C for 0.5 to 3 hours. A SiON layer(26) is deposited on the TiSi2 layer by using a PE-CVD(Plasma Enhanced Chemical Vapor Deposition) method at the temperature of 350 to 600 deg.C. A photoresist pattern is formed on the SiON layer. Then, the SiON layer, the TiSi2 layer, the TiAl3 layer, and the aluminum layer are selectively etched by using the photoresist pattern as an etching mask, and then the photoresist pattern is removed.
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