| 摘要 |
PURPOSE: A method for manufacturing a gate electrode of a semiconductor device is provided to prevent tail from generated when etching is decrease due to patterning time increase by varying etching process. CONSTITUTION: The semiconductor device gate electrode manufacturing method applies to the semiconductor device on which a polycrystalline silicon layer is applied. At first, PH3 is increase in quantity during vaporizing the polycrystalline silicon layer(30) during a pre-vaporizing step injecting and vaporizing the PH3. The, SiH4 is increased in quantity and injected to be vaporized during a main vaporizing step. The pre-vaporizing step further includes following steps. At first, SiH4/PH3="30cc/200cc" is vaporized at temperature of 570 degree and at a pressure of 0.5Torr for 10 seconds. At second, SiH4/PH3="47cc/400cc" is vaporized at temperature of 570 degree and at a pressure of 0.5Torr for 15 seconds. At third, SiH4/PH3="64cc/600cc" is vaporized at temperature of 570 degree and at a pressure of 0.5Torr for 20 seconds. At forth, SiH4/PH3="800cc/600cc" is vaporized at temperature of 570 degree and at a pressure of 0.5Torr for 25 seconds. At fifth, SiH4/PH3="1000cc/300cc" is vaporized at temperature of 570 degree and at a pressure of 0.5Torr for 30 seconds.
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