METHOD FOR FLATTENING INTERLAYER INSULATING FILM IN SEMICONDUCTOR DEVICES

摘要

PURPOSE: A method for flattening an interlayer insulating film is provided to minimize a side effect depending on the thermal load due to lowered temperature of a thermal process and efficiently improve the process time and the equipment operation. CONSTITUTION: A method for flattening an interlayer insulating film forms a borophosphoric silicate glass(BPSG) film on a given underlying layer. The BPSG film is flowed by implementing a rapid thermal annealing process under vapor atmospHere. The process of forming the BPSG film includes forming a conductive line on a given underlying layer and depositing the BPSG film in 5000-10000Å. At this time, the doping concentration of P ions and B ions are controlled to form an undoped silicate glass film into which P ions and B ions are not doped in 1500-2500Å.