FLASH MEMORY DEVICE

摘要

PURPOSE: A flash memory device is provided to lower topology between a cell region and a peripheral region by laminating an NON(Nitride-Oxide-Nitride) layer instead of an existing ONO(Oxide-Nitride-Oxide) layer. CONSTITUTION: A tunnel oxide layer(20) and a floating gate layer(25) are laminated on a semiconductor substrate(10). An NON layer(30) as a barrier layer is formed between the floating gate layer(25) and a control gate layer(35). The control gate layer(35) is laminated on the NON layer(30). A gate is formed by performing a masking etching process. A source/drain region(15) is formed by implanting ions into an active region.