| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for exposure and a phase shift mask in which the resolution of an image formed on a resist according to a two-dimensional random pattern can be improved and the dimensional accuracy of the two-dimensional random pattern projected onto the resist can be improved. SOLUTION: The method for exposure includes a process of first exposure by using a chromium mask 1 having a shading region 11 as a two-dimensional random pattern and a process of second exposure by using a chromium-free phase shift mask 2 having a part 15 of the phase shifter edge 16 of the phase shifter 20 in the position corresponding to the shading region 11. |
